The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Mar. 03, 2020
Applicants:
Applied Materials, Inc., Santa Clara, CA (US);
National University of Singapore, Singapore, SG;
Inventors:
Bhaskar Jyoti Bhuyan, San Jose, CA (US);
Andrea Leoncini, Singapore, SG;
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); C23C 16/44 (2006.01); C23C 16/04 (2006.01); C23C 16/46 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); C23C 16/042 (2013.01); C23C 16/4408 (2013.01); C23C 16/46 (2013.01); H01L 21/0332 (2013.01);
Abstract
Methods of forming graphene hard mask films are disclosed. Some methods are advantageously performed at lower temperatures. The substrate is exposed to an aromatic precursor to form the graphene hard mask film. The substrate comprises one or more of titanium nitride (TiN), tantalum nitride (TaN), silicon (Si), cobalt (Co), titanium (Ti), silicon dioxide (SiO), copper (Cu), and low-k dielectric materials.