The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2022

Filed:

Jun. 23, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hsing-Piao Hsu, Taoyuan, TW;

Nai-Han Cheng, Hsinchu County, TW;

Ping-Chih Ou, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); C23C 14/48 (2006.01); H01J 37/08 (2006.01); F17C 13/04 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); C23C 14/48 (2013.01); H01J 37/08 (2013.01); F17C 13/04 (2013.01);
Abstract

The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.


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