The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

Jan. 04, 2022
Applicant:

Richtek Technology Corporation, Zhubei, TW;

Inventors:

Kun-Huang Yu, Hsinchu, TW;

Chien-Yu Chen, Kaohsiung, TW;

Ting-Wei Liao, Taichung, TW;

Wu-Te Weng, Hsinchu, TW;

Chien-Wei Chiu, Yunlin, TW;

Yong-Zhong Hu, Hsinchu, TW;

Ta-Yung Yang, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/00 (2006.01); H03K 17/16 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 17/161 (2013.01); H03K 17/687 (2013.01); H03K 2217/0036 (2013.01);
Abstract

A switch capable of decreasing parasitic inductance includes: a semiconductor device, a first top metal line, and a second top metal line. The second top metal line electrically connects a power supply input end and a current inflow end of the semiconductor device, wherein a first part of the first top metal line is arranged in parallel and adjacent to a second part of the second top metal line. When the semiconductor device is in an ON operation, an input current outflows from the power supply input end, and is divided into a first current and a second current. When the first current and the second current flow through the first part and the second part respectively, the first current and the second current flow opposite to each other, to reduce an total parasitic inductance of the first top metal line and the second top metal line.


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