The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Feb. 05, 2021
Applicant:
Nikon Corporation, Tokyo, JP;
Inventor:
Shohei Koizumi, Tokyo, JP;
Assignee:
NIKON CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); H01L 51/10 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0545 (2013.01); H01L 51/105 (2013.01);
Abstract
A method for manufacturing a transistor being a bottom-gate transistor is provided. The method for manufacturing a transistor includes a step of forming a first metal layeron an insulator layerprovided on a substrateincluding a gate electrode, a step of applying a resist onto the first metal layer, and patterning the first metal layerby a photolithographic method, an oxide film removal step of removing an oxide filmformed on the patterned first metal layer, and a step of forming a source electrode and a drain electrode by forming a second metal layeron the first metal layer