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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11521961 B1

PDFFull Text
Date of Patent:
Dec. 06, 2022

Filed:

Jun. 29, 2020

Back ballasted vertical npn transistor

Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Akram Ali Salman, Plano, TX (US);

Guruvayurappan Mathur, Plano, TX (US);

Ryo Tsukahara, Dallas, TX (US);

Assignee:

Texas Instruments Incorporated, Dallas, TX (US);

Attorneys:

Andrew R. Ralston

Charles A. Brill

Frank D. Cimino

Primary Examiner:

David C Spalla

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 27/0259 (2013.01); H01L 27/0623 (2013.01); H01L 29/0646 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/66234 (2013.01); H01L 29/66287 (2013.01); H01L 29/7302 (2013.01); H01L 29/7304 (2013.01);
Abstract

An integrated circuit includes a bipolar transistor, e.g. a back-ballasted NPN, that can conduct laterally and vertically. At a low voltage breakdown and low current conduction occur laterally near a substrate surface, while at a higher voltage vertical conduction occurs in a more highly-doped channel below the surface. A relatively high-resistance region at the surface has a low doping level to guide the conduction deeper into the collector.

Find Patent Forward Citations

Salman, Akram. (2022). Back ballasted vertical npn transistor (U.S. Patent No. 11521961). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11521961

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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