The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Jun. 29, 2020
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Akram Ali Salman, Plano, TX (US);
Guruvayurappan Mathur, Plano, TX (US);
Ryo Tsukahara, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 27/0259 (2013.01); H01L 27/0623 (2013.01); H01L 29/0646 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/66234 (2013.01); H01L 29/66287 (2013.01); H01L 29/7302 (2013.01); H01L 29/7304 (2013.01);
Abstract
An integrated circuit includes a bipolar transistor, e.g. a back-ballasted NPN, that can conduct laterally and vertically. At a low voltage breakdown and low current conduction occur laterally near a substrate surface, while at a higher voltage vertical conduction occurs in a more highly-doped channel below the surface. A relatively high-resistance region at the surface has a low doping level to guide the conduction deeper into the collector.