The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

Jan. 13, 2021
Applicant:

Kla Corporation, Milpitas, CA (US);

Inventor:

Asaf Granot, Lotem, IL;

Assignee:

KLA Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06K 9/00 (2022.01); H01L 21/67 (2006.01); G06T 7/00 (2017.01);
U.S. Cl.
CPC ...
H01L 21/67288 (2013.01); G06T 7/001 (2013.01); G06T 2207/20081 (2013.01); G06T 2207/30148 (2013.01);
Abstract

A system and method for generating a quality metric relating to a fully or partially fabricated semiconductor device wafer (FPFSDW), the method including providing a spot map correlating a plurality of reference field images (RFIs) to a corresponding plurality of reference spot locations (RSLs) on at least one reference structure formed on a reference semiconductor device wafer, taking a measurement of at least a portion of at least one FPFSDW structure formed on the FPFSDW, thereby generating a measurement field image (MFI) of at least a portion of the at least one FPFSDW structure and a pupil image of the at least a portion of the at least one FPFSDW structure, identifying, for the measurement, a measurement spot location (MSL) on the at least one FPFSDW structure, using the MFI and the spot map, and generating a quality metric of the FPFSDW, using the pupil image and the MSL.


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