The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

Feb. 20, 2018
Applicant:

Spts Technologies Limited, Newport, GB;

Inventors:

Anthony Wilby, Newport, GB;

Steve Burgess, Newport, GB;

Ian Moncrieff, South Gouces, GB;

Clive Widdicks, Newport, GB;

Scott Haymore, Newport, GB;

Rhonda Hyndman, Newport, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/35 (2006.01); H01J 37/34 (2006.01); B81B 3/00 (2006.01); C23C 14/50 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); C23C 14/34 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3408 (2013.01); B81B 3/0072 (2013.01); C23C 14/345 (2013.01); C23C 14/3471 (2013.01); C23C 14/351 (2013.01); C23C 14/50 (2013.01); C23C 14/505 (2013.01); H01J 37/32669 (2013.01); H01J 37/32715 (2013.01); H01J 37/347 (2013.01); H01J 37/3452 (2013.01); H01J 37/3467 (2013.01); H01J 37/3485 (2013.01); H01L 21/02178 (2013.01); H01L 21/02266 (2013.01); H01L 21/2855 (2013.01); H01L 21/76877 (2013.01); B81C 2201/017 (2013.01); B81C 2201/0181 (2013.01);
Abstract

A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.


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