The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

Nov. 12, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Simon J. Lovett, Nampa, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/08 (2006.01); G11C 11/408 (2006.01); G11C 7/02 (2006.01); G11C 8/14 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 7/02 (2013.01); G11C 8/08 (2013.01); G11C 11/4087 (2013.01); G11C 8/14 (2013.01);
Abstract

Memory devices including word lines coupled to pull-down transistors are disclosed. A memory device may include a number of memory cells, a first word line, and a second word line. The first word line may be configured to apply a voltage to a number of transistors to access at least one of the number of memory cells. The first word line may include a first portion electrically coupled to a first driver and a second portion electrically coupled to a gate of a pull-down transistor. The second word line may be positioned adjacent to the first word line. The second word line may include a third portion electrically coupled to a second driver and a fourth portion electrically coupled to a terminal of the pull-down transistor. Associated systems are also disclosed.


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