The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Jan. 13, 2021
Applicant:
Stmicroelectronics Ltd, Kowloon, HK;
Inventor:
Laurent Gonthier, Taipei, TW;
Assignee:
STMicroelectronics LTD, Kowloon, HK;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 7/155 (2006.01); H02J 7/00 (2006.01); H02M 1/42 (2007.01); H02J 7/34 (2006.01);
U.S. Cl.
CPC ...
H02M 7/155 (2013.01); H02J 7/0063 (2013.01); H02M 1/4208 (2013.01); H02J 7/345 (2013.01);
Abstract
A capacitive element has its terminals coupled together by two thyristors electrically in antiparallel. The discharge of the capacitive element is controlled by the application of a gate current to one thyristor of the two thyristors which is in a reverse-biased state in response to a voltage stored across the terminals of the capacitive element. The reverse-biased thyristor responds to the applied gate current by passing a leakage current to discharge the stored voltage.