The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Sep. 01, 2020
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Ruizhi Tang, Shanghai, CN;
Jinyu Fu, Shanghai, CN;
Lin Liu, Shanghai, CN;
Bo Li, Shanghai, CN;
Peng Yang, Shanghai, CN;
Haojun Huang, Shanghai, CN;
Jialei Liu, Shanghai, CN;
Abstract
A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes: providing a substrate; forming a dummy gate structure including a dummy gate dielectric layer, an initial dummy gate electrode layer, and a first sidewall spacer; forming an isolation layer having a surface lower than or coplanar with the dummy gate structure; forming a dummy gate electrode layer having a surface lower than the isolation layer, and forming a first opening to expose a portion of the first sidewall spacer; forming a modified sidewall spacer from the exposed first sidewall spacer; forming a second opening by removing the dummy gate electrode layer; forming a third opening by removing the dummy gate dielectric layer and the modified sidewall spacer, where top of the third opening has a size larger than bottom of the third opening; and forming a gate structure in the third opening.