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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11515393 B1

PDFFull Text
Date of Patent:
Nov. 29, 2022

Filed:

Jul. 05, 2021

Semiconductor device having nanosheet transistor and methods of fabrication thereof

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Shu-Wen Shen, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

NZ Carr Law Office

Primary Examiner:

Changhyun Yi

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 29/786 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device structure is provided. The device includes a plurality of semiconductor layers and a gate electrode layer surrounding each semiconductor layer of the plurality of semiconductor layers. The gate electrode layer comprises a first part and a second part below the first part. The second part comprises a first portion disposed adjacent a first semiconductor layer of the plurality of semiconductor layers, and an exterior surface of the first portion having a first radius of curvature, a second portion below the first portion and in contact with a second semiconductor layer of the plurality of semiconductor layers, and a third portion below the second portion and in contact with a third semiconductor layer of the plurality of semiconductor layers, and an exterior surface of the third portion having a second radius of curvature greater than the first radius of curvature.

Find Patent Forward Citations

Shen, Shu-Wen. (2022). Semiconductor device having nanosheet transistor and methods of fabrication thereof (U.S. Patent No. 11515393). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11515393

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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