The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Nov. 30, 2020
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Jaeho Yoon, Gyeongsangbuk-do, KR;

Moonsoo Kang, Daegu, KR;

Donghyeon Jang, Jinju-si, KR;

Shihyung Park, Daegu, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14658 (2013.01); H01L 27/14612 (2013.01); H01L 31/105 (2013.01);
Abstract

A thin film transistor array substrate for a digital X-ray detector device includes a p+ type semiconductor layer and a p− type semiconductor layer having different impurity concentrations are disposed above an intrinsic semiconductor layer of the PIN diode and an n+ type semiconductor layer and an n− type semiconductor layer having different impurity concentrations are disposed below the intrinsic semiconductor layer of the PIN diode to minimize ejection of holes by the p− type semiconductor layer and minimize ejection of electros by the n− type semiconductor layer, thereby minimizing occurrence of leakage current of the PIN diode.


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