The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Jun. 04, 2020
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Xinshu Cai, Singapore, SG;

Lanxiang Wang, Singapore, SG;

Yongshun Sun, Singapore, SG;

Eng Huat Toh, Singapore, SG;

Shyue Seng Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11521 (2017.01); H01L 27/11519 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 27/11519 (2013.01);
Abstract

A nonvolatile memory device is provided. The device comprises a memory transistor. A first capacitor is coupled to the memory transistor. A second capacitor is coupled to the memory transistor. The second capacitor comprises a first electrode and a second electrode. The first capacitor and the second capacitor are connected to separate input terminals.


Find Patent Forward Citations

Cai, Xinshu. (2022). One transistor two capacitors nonvolatile memory cell (U.S. Patent No. 11515314). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11515314

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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