The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Jan. 07, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Chih-Chung Chen, Tainan, TW;
Po-Chang Lin, Tainan, TW;
Huang-Ren Wei, Tainan, TW;
Wei-Lun Chou, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for forming a semiconductor device. A substrate having a first region and a second region surrounding the first region is provided. The first region includes a first active area and a first gate. A dummy pattern is disposed on the substrate within the second region around a perimeter of the first region. A resist pattern masks the second region and includes an opening that exposes the first region. An ion implantation process is performed to implant dopants through the opening into the first active area not covered by the first gate within the first region, thereby forming doped regions in the first active area. A resist stripping process is performed to remove the resist pattern by using a sulfuric acid-hydrogen peroxide mixture (SPM) solution at a temperature that is higher than or equal to 120˜190 degrees Celsius. The substrate is subjected to a cleaning process.