The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Oct. 27, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Amrita B. Mullick, Santa Clara, CA (US);

Srinivas Gandikota, Santa Clara, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); C23C 16/30 (2006.01); C23C 14/14 (2006.01); C23C 14/04 (2006.01); C23C 16/04 (2006.01); C23C 14/58 (2006.01); H01L 21/768 (2006.01); C23C 14/06 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); C23C 14/046 (2013.01); C23C 14/0623 (2013.01); C23C 14/14 (2013.01); C23C 14/5866 (2013.01); C23C 16/045 (2013.01); C23C 16/305 (2013.01); H01L 21/02568 (2013.01); H01L 21/321 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/32133 (2013.01); H01L 2924/0111 (2013.01); H01L 2924/01042 (2013.01); H01L 2924/01074 (2013.01);
Abstract

Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.


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