The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Oct. 22, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Michael Wenyoung Tsiang, Milpitas, CA (US);
Abdul Aziz Khaja, San Jose, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Kevin Hsiao, ChuBei, TW;
Liangfa Hu, Newark, CA (US);
Yayun Cheng, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/26 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/26 (2013.01); H01L 21/31144 (2013.01); H01L 21/02115 (2013.01); H01L 21/02118 (2013.01);
Abstract
Exemplary processing methods may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The methods may include adjusting a variable capacitor within 20% of a resonance peak. The variable capacitor may be coupled with an electrode incorporated within a substrate support on which a substrate is seated. The methods may include depositing a material on the substrate.