The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Jul. 30, 2018
Hitachi High-tech Corporation, Tokyo, JP;
Masaaki Komori, Tokyo, JP;
Katsuo Oki, Tokyo, JP;
Hitachi High-Tech Corporation, Tokyo, JP;
Abstract
Provided is a semiconductor inspection device capable of high-speed response analysis as defect analysis of a fine-structured device constituting an LSI. Therefore, the semiconductor inspection device includes a vacuum chamber, a sample tablewhich is disposed in the vacuum chamber and on which a sampleis placed, an electron optical systemdisposed such that an electron beam is emitted from above the sample, a plurality of probe unitsconnected to external devicesanddisposed outside the vacuum chamber via a coaxial cable, and an electrodeprovided on or in the vicinity of the sample table. The probe unitincludes a measurement probeconfigured to come into contact with the sample, a GND terminalconfigured to come into contact with the electrode, and a probe holderconfigured to hold the measurement probe and the GND terminal, connect a signal line of the coaxial cable to the measurement probe, and connect a GND line of the coaxial cable to the GND terminal. When the measurement probe of the probe unit comes into contact with the sample, the GND terminal comes into contact with the electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile