The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Oct. 31, 2011
Hitoshi Furusho, Funabashi, JP;
Hitoshi Furusho, Funabashi, JP;
NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;
Abstract
There is provided a plasma annealing device that can change the crystal structure of a film by processing the film (coating) on a substrate and that has excellent productivity. A method for producing a film includes step (A) irradiating a film on a substrate with atmospheric pressure plasma, wherein the crystal structure of a constituent of the film is changed. The step (A) may include generating plasma under atmospheric pressure by energization at a frequency of 10 hertz to 100 megahertz and a voltage of 60 volts to 1,000,000 volts, and directly irradiating the film on the substrate with the generated plasma. A method for changing a crystal structure of a constituent of a film includes step (A). A plasma generation device used in step (A). An electronic device produced through step (A).