The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
Aug. 27, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Minhee Cho, Suwon-si, KR;
Hyunmog Park, Seoul, KR;
Minwoo Song, Seongnam-si, KR;
Woobin Song, Hwaseong-si, KR;
Hyunsil Oh, Hwaseong-si, KR;
Minsu Lee, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes: a substrate including an active region and a device isolation region; a flat plate structure formed on the substrate; an oxide semiconductor layer covering a top surface of the flat plate structure and continuously arranged on a top surface of the substrate in the active region and the device isolation region; a gate structure arranged on the oxide semiconductor layer and including a gate dielectric layer and a gate electrode; and a source/drain region arranged on both sides of the gate structure and formed in the oxide semiconductor layer, in which, when viewed from a side cross-section, an extending direction of the flat plate structure and an extending direction of the gate structure cross each other.