The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
Aug. 31, 2016
Applicant:
Nexperia B.v., Eindhoven, NL;
Inventors:
Soenke Habenicht, Hamburg, DE;
Steffen Holland, Hamburg, DE;
Assignee:
Nexperia B.V., Nijmegen, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/0696 (2013.01); H01L 29/0804 (2013.01); H01L 29/0808 (2013.01); H01L 29/0873 (2013.01); H01L 29/0882 (2013.01); H01L 29/1004 (2013.01); H01L 29/1008 (2013.01); H01L 29/41708 (2013.01); H01L 29/41741 (2013.01); H01L 29/41758 (2013.01); H01L 29/66666 (2013.01); H01L 29/66712 (2013.01); H01L 29/735 (2013.01); H01L 29/7393 (2013.01); H01L 29/7809 (2013.01); H01L 29/7816 (2013.01);
Abstract
A semiconductor device () comprising: a doped semiconductor substrate (); an epitaxial layer (), disposed on top of the substrate, the epitaxial layer having a lower concentration of dopant than the substrate; a switching region disposed on top of the epitaxial layer; and a contact diffusion () disposed on top of the epitaxial layer, the contact diffusion having a higher concentration of dopant than the epitaxial layer; wherein the epitaxial layer forms a barrier between the contact diffusion and the substrate.