The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

Dec. 03, 2020
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Nicholas Stephen Dellas, Dallas, TX (US);

Dong Seup Lee, McKinney, TX (US);

Andinet Tefera Desalegn, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 29/205 (2006.01); H01L 29/207 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/0254 (2013.01); H01L 21/0257 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02505 (2013.01); H01L 29/0642 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01);
Abstract

In a described example, an integrated circuit (IC) is disclosed that includes a transistor. The transistor includes a substrate, and a buffer structure overlying the substrate. The buffer structure has a first buffer layer, a second buffer layer overlying the first buffer layer, and a third buffer layer overlying the second buffer layer. The first buffer layer has a first carbon concentration, the second buffer layer has a second carbon concentration lower than the first carbon concentration, and the third buffer layer has a third carbon concentration higher than the second carbon concentration. An active structure overlies the buffer structure.


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