The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

Oct. 25, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Darwin A. Clampitt, Wilder, ID (US);

Roger W. Lindsay, Boise, ID (US);

Christopher R. Ritchie, Boise, ID (US);

Shawn D. Lyonsmith, Boise, ID (US);

Matthew J. King, Boise, ID (US);

Lisa M. Clampitt, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 27/11556 (2017.01); H01L 27/11565 (2017.01); H01L 27/11519 (2017.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); H01L 27/11575 (2017.01); H01L 27/11548 (2017.01); G11C 7/18 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 7/18 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76837 (2013.01); H01L 21/76885 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11548 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11575 (2013.01);
Abstract

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatus includes a first conductive contact; a second conductive contact; levels of conductive materials stacked over one another and located over the first and second conductive contacts; levels of dielectric materials interleaved with the levels of the conductive materials, the levels of conductive materials and the levels of dielectric materials formed a stack of materials; a first conductive structure located on a first side of the stack of materials and contacting the first conductive contact and a first level of conductive material of the levels of conductive materials; and a second conductive structure located on a second side of the stack of materials and contacting the second conductive contact and a second level of conductive material of the levels of conductive materials.


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