The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
Jun. 13, 2018
Dynex Semiconductor Limited, Lincolnshire, GB;
Zhuzhou Crrc Times Electric Co. Ltd., Hunan, CN;
Chunlin Zhu, Lincolnshire, GB;
Vinay Suresh, Lincolnshire, GB;
Ian Deviny, Lincolnshire, GB;
Yangang Wang, Lincolnshire, GB;
DYNEX SEMICONDUCTOR LIMITED, Lincolnshire, GB;
ZHUZHOU CRRC TIMES ELECTRIC CO. LTD., Hunan, CN;
Abstract
We describe herein a high voltage semiconductor device comprising a power semiconductor device portion () and a temperature sensing device portion (). The temperature sensing device portion comprises: an anode region (), a cathode region (), a body region () in which the anode region and the cathode region are formed. The temperature sensing device portion also comprises a semiconductor isolation region () in which the body region is formed, the semiconductor isolation region having an opposite conductivity type to the body region, the semiconductor isolation region being formed between the power semiconductor device portion and the temperature sensing device portion.