The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
May. 12, 2020
Ememory Technology Inc., Hsin-Chu, TW;
Chia-Jung Hsu, Hsinchu County, TW;
Wei-Ren Chen, Hsinchu County, TW;
Wein-Town Sun, Hsinchu County, TW;
eMemory Technology Inc., Hsin-Chu, TW;
Abstract
A memory device includes a well, a first gate layer, a second gate layer, a doped region, a blocking layer and an alignment layer. The first gate layer is formed on the well. The second gate layer is formed on the well. The doped region is formed within the well and located between the first gate layer and the second gate layer. The blocking layer is formed to cover the first gate layer, the first doped region and a part of the second gate layer and used to block electrons from excessively escaping. The alignment layer is formed on the blocking layer and above the first gate layer, the doped region and the part of the second gate layer. The alignment layer is thinner than the blocking layer, and the alignment layer is thinner than the first gate layer and the second gate layer.