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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11508713 B1

PDFFull Text
Date of Patent:
Nov. 22, 2022

Filed:

Feb. 05, 2021

Methods of manufacturing semiconductor package and package-on-package

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junyoung Oh, Seoul, KR;

Kyonghwan Koh, Asan-si, KR;

Sangsoo Kim, Cheonan-si, KR;

Seunghwan Kim, Asan-si, KR;

Jongho Park, Cheonan-si, KR;

Yongkwan Lee, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Kyoung Lee

Assistant Examiner:

Christina A Sylvia

Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 25/00 (2006.01); H01L 25/10 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/78 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/78 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 2224/214 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06586 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01);
Abstract

A method of manufacturing a semiconductor package includes forming a laser reactive polymer layer on a substrate; mounting a semiconductor device on the substrate; irradiating at least a portion of the laser reactive polymer layer below the semiconductor device with a laser having a wavelength capable of penetrating through the semiconductor device on the substrate to modify the laser reactive polymer layer to have a hydrophilic functional group; and forming a first encapsulation material layer between the semiconductor device and the substrate.

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