The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
Jun. 12, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Sean M. Seutter, San Jose, CA (US);
Mun Kyu Park, San Jose, CA (US);
Hien M Le, San Jose, CA (US);
Chih-Chiang Chuang, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); C23C 16/28 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01); H01L 21/265 (2006.01); H01L 21/223 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3003 (2013.01); C23C 16/28 (2013.01); C23C 16/45538 (2013.01); C23C 16/45548 (2013.01); H01L 21/2236 (2013.01); H01L 21/265 (2013.01); H01L 21/76856 (2013.01);
Abstract
Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.