The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

Mar. 15, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Anurag Kumar Mishra, Fremont, CA (US);

James Rogers, Los Gatos, CA (US);

Leonid Dorf, San Jose, CA (US);

Rajinder Dhindsa, Pleasanton, CA (US);

Olivier Luere, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32174 (2013.01); H01J 37/32027 (2013.01); H01J 37/32036 (2013.01); H01J 37/32165 (2013.01); H01J 37/32577 (2013.01); H01J 37/32724 (2013.01); H01L 21/6833 (2013.01); H01J 2237/3341 (2013.01);
Abstract

Embodiments described herein are applicable for use in all types of plasma assisted or plasma enhanced processing chambers and also for methods of plasma assisted or plasma enhanced processing of a substrate. More specifically, embodiments of this disclosure include a broadband filter assembly, also referred to herein as a filter assembly, that is configured to reduce and/or prevent RF leakage currents from being transferred from one or more RF driven components to a ground through other electrical components that are directly or indirectly electrically coupled to the RF driven components and ground with high input impedance (low current loss) making it compatible with shaped DC pulse bias applications.


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