The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
Mar. 12, 2021
Micron Technology, Inc., Boise, ID (US);
Chang H. Siau, Saratoga, CA (US);
Hao T. Nguyen, San Jose, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Sensing devices might include a first voltage node configured to receive a first voltage level, a second voltage node configured to receive a second voltage level lower than the first voltage level, a p-type field-effect transistor (pFET) selectively connected to a data line, and a sense node selectively connected to the pFET. The pFET might be connected between the first voltage node and the data line, between the second voltage node and the data line, and between the first voltage node and the data line. Memories might have controllers configured to cause the memories to determine whether a memory cell has an intended threshold voltage using similar sensing devices.