The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
May. 18, 2021
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Dengtao Zhao, Los Gatos, CA (US);
Ravi Kumar, Redwood City, CA (US);
Chin-Yi Chen, San Jose, CA (US);
Ryohei Shoji, Yokohama, JP;
Assignee:
SanDisk Technologies LLC, Addison, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/24 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 16/14 (2013.01); G11C 16/349 (2013.01); G11C 16/24 (2013.01); H01L 27/11582 (2013.01);
Abstract
A nonvolatile memory control method includes a step of writing, repeatedly to a nonvolatile memory cells. The method continues with detecting when writing reaches a writing threshold value. Upon reaching the writing threshold, the method continues with driving a charge to at least one parasitic area intermediate at least two charge storage areas of the nonvolatile memory cells to improve data retention in at least one of the at least two charge storage areas of the nonvolatile memory cells.