The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

Apr. 09, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chi Yang, Tainan, TW;

Yen-Shuo Su, Hsinchu, TW;

Jui-Pin Wu, Hsinchu, TW;

Li-Jui Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); H05G 2/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70891 (2013.01); G03F 7/70033 (2013.01); G03F 7/7055 (2013.01); G03F 7/7085 (2013.01); G03F 7/70166 (2013.01); G03F 7/70591 (2013.01); H05G 2/005 (2013.01); H05G 2/008 (2013.01);
Abstract

In accordance with some embodiments, a lithography method in semiconductor manufacturing is provided. The lithography method includes transmitting a main pulse laser to a zone of excitation through a first optic assembly. The lithography method further includes supplying a coolant to the first optic assembly and detecting a temperature of the coolant with a use of at least one sensor. The lithography method also includes adjusting a heat transfer rate between the coolant and the first optic assembly based on the temperature of the first optic assembly. In addition, the lithography method includes generating a droplet of a target material into the zone of excitation. The lithography method further includes exciting the droplet of the target material into plasma with the main pulse laser in the zone of excitation.


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