The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2022
Filed:
Oct. 18, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/02675 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract
The present disclosure is directed to semiconductor structures with source/drain epitaxial stacks having a low-melting point top layer and a high-melting point bottom layer. For example, a semiconductor structure includes a gate structure disposed on a fin and a recess formed in a portion of the fin not covered by the gate structure. Further, the semiconductor structure includes a source/drain epitaxial stack disposed in the recess, where the source/drain epitaxial stack has bottom layer and a top layer with a higher activated dopant concentration than the bottom layer.