The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2022
Filed:
Nov. 03, 2020
Applicants:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Inventors:
Assignees:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/51 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/02458 (2013.01); H01L 29/40111 (2019.08); H01L 29/42356 (2013.01); H01L 29/516 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01);
Abstract
Techniques in accordance with embodiments described herein are directed to semiconductor devices including a layer of aluminum nitride AlN or aluminum gallium nitride AlGaN as a ferroelectric layer and a method of making a thin film of AlN/AlGaN that possesses ferroelectric properties. In a ferroelectric transistor, a thin film of AlN/AlGaN that exhibits ferroelectric properties is formed between a gate electrode and a second semiconductor layer, e.g., of GaN.