The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Apr. 06, 2021
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Erh-Kun Lai, Taichung, TW;

Hsiang-Lan Lung, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/1159 (2017.01); H01L 21/28 (2006.01); H01L 27/11597 (2017.01); H01L 29/45 (2006.01); H01L 21/764 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11597 (2013.01); H01L 21/28518 (2013.01); H01L 21/764 (2013.01); H01L 27/1159 (2013.01); H01L 29/0649 (2013.01); H01L 29/45 (2013.01);
Abstract

A semiconductor structure and a method for manufacturing the same are provided. The method includes: forming a silicide layer, forming a vertical Si channel layer, wherein the vertical Si channel layer is on an upper surface of the silicide layer, the vertical Si channel layer has a first silicon phase; performing a first annealing step so as to move the silicide layer upward and change a solid phase of the vertical Si channel layer from the first silicon phase to a second silicon phase at an interface of the silicide layer and the vertical Si channel layer, wherein the second silicon phase has a conductivity higher than a conductivity of the first silicon phase.


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