The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

May. 10, 2021
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Chen-Hao Lien, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 15/04 (2006.01); B32B 33/00 (2006.01); H01L 21/311 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); B32B 15/043 (2013.01); B32B 33/00 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01);
Abstract

A semiconductor device includes a substrate, a conductive layer, a nitride mask layer, a carbon mask layer and an anti-reflective coating stack. The conductive layer is disposed on the substrate. The nitride mask layer is disposed on the conductive layer, wherein the nitride mask layer has a first stress. The carbon mask layer is disposed on the nitride mask layer, wherein the carbon mask layer has a second stress and a difference between the second stress and the first stress is smaller than 200 MPa. The anti-reflective coating stack is disposed on the carbon mask layer.


Find Patent Forward Citations

Lien, Chen-Hao. (2022). Semiconductor device and manufacturing method thereof (U.S. Patent No. 11501977). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11501977

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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