The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Dec. 27, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Vignesh Sundar, Sunnyvale, CA (US);
Yu-Jen Wang, San Jose, CA (US);
Luc Thomas, San Jose, CA (US);
Guenole Jan, San Jose, CA (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu, TW;
Abstract
A dual magnetic tunnel junction (DMTJ) is disclosed with a PL1/TB1/free layer/TB2/PL2 configuration wherein a first tunnel barrier (TB1) has a substantially lower resistance×area (RA) product than RAfor an overlying second tunnel barrier (TB2) to provide an acceptable magnetoresistive ratio (DRR). Moreover, first and second pinned layers, PL1 and PL2, respectively, have magnetizations that are aligned antiparallel to enable a lower critical switching current that when in a parallel alignment. The condition RA1<RA2 is achieved with one or more of a smaller thickness and a lower oxidation state for TB1 compared with TB2, with conductive (metal) pathways formed in a metal oxide or metal oxynitride matrix for TB1, or with a TB1 containing a dopant to create conducting states in the TB1 band gap. Alternatively, TB1 may be replaced with a metallic spacer to improve conductivity between PL1 and the FL.