The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Jan. 13, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Chi-Hsuan Tang, Kaohsiung, TW;
Chung-Ting Huang, Kaohsiung, TW;
Bo-Shiun Chen, Taichung, TW;
Chun-Jen Chen, Tainan, TW;
Yu-Shu Lin, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating a semiconductor device includes the steps of first forming a gate structure on a substrate, forming a first spacer adjacent to the gate structure, forming a second spacer adjacent to the first spacer, forming an epitaxial layer adjacent to the second spacer, forming a second cap layer on the epitaxial layer, and then forming a first cap layer on the second cap layer. Preferably, a top surface of the first cap layer includes a V-shape and the first cap layer and the second cap layer are made of different materials.