The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Oct. 30, 2020
Sumitomo Electric Device Innovations, Inc., Kanagawa, JP;
Takuma Nakano, Yokohama, JP;
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., Kanagawa, JP;
Abstract
A nitride semiconductor device is disclosed. The semiconductor device is formed by a process that first deposits a silicon nitride (SiN) film on a semiconductor layer by the lower pressure chemical vapor deposition (LPCVD) technique at a temperature, then, forming an opening in the SiN film for an ohmic electrode. Preparing a photoresist on the SiN film, where the photoresist provides an opening that fully covers the opening in the SiN film, the process exposes a peripheral area around the opening of the SiN film to chlorine (Cl) plasma that may etch the semiconductor layer to form a recess therein. Metals for the ohmic electrode are filled within the recess in the semiconductor layer and the peripheral area of the SiN film. Finally, the metals are alloyed at a temperature lower than the deposition temperature of the SiN film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile