The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Oct. 15, 2020
Applicant:

Microchip Technology Incorporated, Chandler, AZ (US);

Inventors:

Paul Fest, Chandler, AZ (US);

Jacob Williams, Gilbert, AZ (US);

Josh Kaufman, Scottsdale, AZ (US);

Greg Dix, Tempe, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01);
Abstract

A process is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) device. A TFR film is formed and annealed over an IC structure including IC elements and IC element contacts. An oxide cap is formed over the TFR film, which acts as a hardmask during a TFR etch of the TFR film to define a TFR element, which may eliminate the use of a photomask and thereby eliminate post-etch removal of photomask polymer. TFR edge spacers may be formed over lateral edges of the TFR element to insulate such TFR element edges. TFR contact openings are etched in the oxide cap over the TFR element, and a metal layer is formed over the IC structure and extending into the TFR contact openings to form metal contacts to the IC element contacts and the TFR element.


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