The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Jul. 01, 2020
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Po-Yen Hsu, Taichung, TW;

Shih-Ning Tsai, Taichung, TW;

Bo-Lun Wu, Taichung, TW;

Tse-Mian Kuo, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); G11C 7/18 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/24 (2013.01); G11C 7/18 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/1608 (2013.01);
Abstract

Provided are a resistive random access memory and a method of manufacturing the same. The resistive random access memory includes a stacked structure and a bit line structure. The stacked structure is disposed on a substrate. The stacked structure includes a bottom electrode, a top electrode and a resistance-switching layer. The bottom electrode is disposed on the substrate. The top electrode is disposed on the bottom electrode. The resistance-switching layer is disposed between the bottom electrode and the top electrode. The bit line structure covers a top surface of the stacked structure and covers a portion of a sidewall of the stacked structure. The bit line structure is electrically connected to the stacked structure.


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