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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11495632 B1

PDFFull Text
Date of Patent:
Nov. 08, 2022

Filed:

Aug. 31, 2020

Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Kuo-Cheng Lee, Tainan, TW;

Yun-Wei Cheng, Taipei, TW;

Yung-Lung Hsu, Tainan, TW;

Hsin-Chi Chen, Tainan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Marcos D Pizarro

Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1464 (2013.01); H01L 27/1462 (2013.01); H01L 27/1463 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14629 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14698 (2013.01); H01L 27/14685 (2013.01);
Abstract

A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.

Find Patent Forward Citations

Lee, Kuo-Cheng. (2022). Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters (U.S. Patent No. 11495632). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11495632

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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