The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Nov. 10, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kamal M. Karda, Boise, ID (US);

Haitao Liu, Boise, ID (US);

Litao Yang, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); G11C 11/408 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10805 (2013.01); G11C 11/4085 (2013.01); H01L 27/10891 (2013.01);
Abstract

Systems, methods and apparatus are provided for an array of vertically stacked memory cells having vertically oriented access devices having a first source/drain region and a second source drain region vertically separated by a channel region, and gates opposing the channel region, vertically oriented access lines coupled to the gates and separated from a channel region by a gate dielectric. The memory cells have horizontally oriented storage nodes coupled to the first source/drain region and horizontally oriented digit lines coupled to the second source/drain regions.


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