The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Aug. 20, 2020
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Lucas Petersen Barbosa Lima, Heverlee, BE;

Rami Khazaka, Leuven, BE;

Qi Xie, Wilsele, BE;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/167 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); H01L 21/02362 (2013.01); H01L 21/02381 (2013.01); H01L 21/02579 (2013.01); H01L 21/31105 (2013.01); H01L 29/167 (2013.01);
Abstract

Methods and systems for selectively depositing a p-type doped silicon germanium layer and structures and devices including a p-type doped silicon germanium layer are disclosed. An exemplary method includes providing a substrate, comprising a surface comprising a first area comprising a first material and a second area comprising a second material, within a reaction chamber; depositing a p-type doped silicon germanium layer overlying the surface, the p-type doped silicon germanium layer comprising gallium; and depositing a cap layer overlying the p-type doped silicon germanium layer. The method can further include an etch step to remove the cap layer and the p-type doped silicon germanium layer overlying the second material.


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