The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Mar. 03, 2020
Applicants:
Tohoku University, Miyagi, JP;
Nippon Shokubai Co., Ltd., Osaka, JP;
Inventors:
Akinobu Teramoto, Miyagi, JP;
Yoshinobu Shiba, Miyagi, JP;
Takashi Abe, Osaka, JP;
Akira Nishimura, Osaka, JP;
Assignees:
TOHKU UNIVERSITY, Miyagi, JP;
NIPPON SHOKUBAI CO., LTD., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); H01L 21/0231 (2013.01); H01L 21/02211 (2013.01); H01L 21/02277 (2013.01);
Abstract
A method for preparing a silicon nitride film with a high deposition rate and a reduced damage to the substrate and/or the underlying layer formed under the silicon nitride film. The method for preparing a silicon nitride film contains the steps of irradiating a nitride with an ultraviolet light, and contacting the nitride irradiated with the ultraviolet light and a hydrogenated cyclic silane represented by a general formula SiH, wherein n is 5, 6, or 7.