The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Jul. 23, 2021
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventor:

Wen-Chiao Ho, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G11C 16/26 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01);
Abstract

A control method of a memory device is provided. When a target memory cell whose source is connected to a first source line needs to be read, a word line controller provides a first voltage to a word line corresponding to the target memory cell and also provides the first voltage to a word line corresponding to the next row of the target memory cell, so that the period when the word line corresponding to the target memory cell remains at the first voltage overlaps the period when the word line corresponding to the next row of the target memory cell remains at the first voltage. When the target memory cell needs to be read, a source line controller provides a second voltage to the first source line, and provides a third voltage to the second source line; the third voltage is not equal to the second voltage.


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Ho, Wen-Chiao. (2022). Memory device and control method thereof for fast read (U.S. Patent No. 11495304). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11495304

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