The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Dec. 18, 2019
Western Digital Technologies, Inc., San Jose, CA (US);
Chih-Ching Hu, Pleasanton, CA (US);
Yung-Hung Wang, San Jose, CA (US);
Ann Lorraine Carvajal, Lathrop, CA (US);
Ming Mao, Dublin, CA (US);
Chen-Jung Chien, Mountain View, CA (US);
Yuankai Zheng, Fremont, CA (US);
Ronghui Zhou, Fremont, CA (US);
Dujiang Wan, San Ramon, CA (US);
Carlos Corona, Pleasanton, CA (US);
Daniele Mauri, San Jose, CA (US);
Ming Jiang, San Jose, CA (US);
Western Digital Technologies, Inc., San Jose, CA (US);
Abstract
A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.