The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Nov. 21, 2019
Applicant:

Applied Materials, Inc, Santa Clara, CA (US);

Inventors:

Abhijeet Laxman Sangle, Maharashtra, IN;

Vijay Bhan Sharma, Rajasthan, IN;

Ankur Kadam, Maharashtra, ID;

Bharatwaj Ramakrishnan, San Jose, CA (US);

Visweswaren Sivaramakrishnan, Cupertino, CA (US);

Yuan Xue, Xi'an, CN;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/35 (2006.01); H01L 41/319 (2013.01); H01L 41/047 (2006.01); H01L 41/08 (2006.01); H01L 41/316 (2013.01); C23C 14/06 (2006.01); C23C 14/54 (2006.01); H01L 41/187 (2006.01);
U.S. Cl.
CPC ...
H01L 41/319 (2013.01); C23C 14/06 (2013.01); C23C 14/351 (2013.01); C23C 14/54 (2013.01); H01L 41/0477 (2013.01); H01L 41/0815 (2013.01); H01L 41/1875 (2013.01); H01L 41/316 (2013.01);
Abstract

A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.


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