The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Mar. 08, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Takuo Kikuchi, Kamakura, JP;
Yusuke Kawaguchi, Kanazawa, JP;
Tatsuya Nishiwaki, Nonoichi, JP;
Hidehiko Yabuhara, Kamakura, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes first and second electrodes, first to third semiconductor regions, a structure body, and a gate electrode. The first semiconductor region is provided on the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided selectively on the second semiconductor region. The structure body includes an insulating part and a conductive part. The insulating part is arranged with the third and second semiconductor regions, and a portion of the first semiconductor region. The conductive part is provided in the insulating part. The conductive part includes a portion facing the first semiconductor region. The gate electrode faces the second semiconductor region. The second electrode is provided on the second and third semiconductor regions, and the structure body. The second electrode is electrically connected to the second and third semiconductor regions, and the conductive part.