The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Jan. 28, 2021
Micron Technology, Inc., Boise, ID (US);
Gordon A. Haller, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Some embodiments include a method of forming an integrated assembly. A first stack is formed over a conductive structure. The first stack includes a second layer between first and third layers. The first and third layers are conductive. A first opening is formed through the first stack. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. The second stack has alternating first and second levels. A second opening is formed through the second stack and through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack, through the third layer, and to the second layer. The second layer is removed, forming a conduit. Second semiconductor material is formed within the conduit. Dopant is out-diffused from the second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies.