The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Mar. 02, 2021
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Min-Chung Cheng, Taoyuan, TW;

Chen-Tsung Liao, New Taipei, TW;

Cheng-Wei Chiu, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10823 (2013.01); H01L 27/10876 (2013.01);
Abstract

A semiconductor device includes a substrate, an oxide layer and a word line. The substrate has a plurality of protruding portions. Adjacent two of the protruding portions define a dense zone, and another adjacent two of the protruding portions define a loose zone. The oxide layer is disposed on the substrate. The word line is disposed on the substrate. A bottom surface of a portion of the word line in the dense zone and a bottom surface of a portion of the word line in the loose zone are substantially at the same height.


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