The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Mar. 05, 2020
Applicant:

Xilinx, Inc., San Jose, CA (US);

Inventors:

Gamal Refai-Ahmed, Santa Clara, CA (US);

Suresh Ramalingam, Fremont, CA (US);

Boon Y. Ang, Sunnyvale, CA (US);

Toshiyuki Hisamura, San Jose, CA (US);

Suresh Parameswaran, Fremont, CA (US);

Scott McCann, Sunnyvale, CA (US);

Hoa Lap Do, San Jose, CA (US);

Assignee:

XILINX, INC., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 21/306 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3675 (2013.01); H01L 21/30604 (2013.01); H01L 23/3736 (2013.01); H01L 24/27 (2013.01); H01L 24/32 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73253 (2013.01); H01L 2924/3511 (2013.01);
Abstract

In one example, a method includes providing a first side of a semiconductor substrate with a plurality of transistors, etching a second side of the substrate, opposite the first side, with a pattern of trenches, the trenches having a pre-defined depth and width, and providing the etched semiconductor substrate in a package. In one example, the predefined depth and width of the trenches is such so as to increase the surface area of the second side of the substrate by at least 20 percent. In one example, the method also includes providing a layer of a thermal interface material (TIM) on the second side of the substrate, including to fill at least a portion of the trenches.


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